In this theis, the p-type ZnO films were grown on the glass substrates by ultrasonic spray pyrolysis method. The experiment divided into two parts mainly. The first part is about the deposition of the thin films. The second part is the measurements and analysis of these deposited ZnO thin films. The structure, electronic properties and the changes of the band gaps with different fabrication parameters were analized. Results of X-ray diffraction reveal that the Sb atoms were successfully occupied the Zn sites, and make the（101） peak shift to lower value. The Hall-effect measurement shows that we obtained the best electronic results when the grown temperature was at 550℃. The ZnO with Sb-doping of 2.2at.％ exhibits a high hole concentration of 1.73 × 1018 cm−3 , low resistivity of 0.05 -cm and high mobility of 17.52cm2 /Vs. In conclusion ,the Sb-doped p-type ZnO films were successfully grown by ultrasonic spray pyrolysis method.