Transparent and high electron mobility thin film transistor (TFT) is the key technology for modern displays. The transparency can enhance the brightness of display at lower operated power. The high electron mobility can enhance the switching speed and resolution. Metal oxides, for example zinc oxide (ZnO) can meet those requirements. In this study, we grow ZnO nanorod array and transform into ZnO nanorod film on glass substrate by aqueous solution deposition (ASD). However, ZnO nanorod array cannot be transformed into ZnO nanorod film easily due to larger lattice mismatch and the larger gap between ZnO nanorod than those of ZnO nanorod array on GaN or sapphire substrates. ZnO nanorod array transformed to ZnO nanorod film is obtained by incorporating with nitric acid (HNO3) solution to increase the size of nanorods and enhance the merge of ZnO nanorods on glass substrate and it exhibits electron Hall mobility of 6 cm2/V-s. We can obtain a high quality ZnO nanorod film transformed from arrays and it is suitable for fabricate ZnO TFTs.