Among thin film solar cells, copper indium gallium selenide (CIGS) recently become the most popular photovoltaic material. In this paper, we attempt to use copper indium disulfide (CuInS2) as an alternative absorber layer material of CIGS and the copper gallium disulfide (CuGaS2) has wide band gap can be window layer material. We expect to developed different materials with various choices. In the preparation process, I-III-VI ternary chalcopyrite semiconductors of CuInS2 and CuGaS2 were successfully fabricated by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD) method for the first time. We use cupper plate and glass two different substrate to conduct characterizations of Cu(In,Ga)S2. In copper substrate can be found that the infinite copper fill the copper vacancy was better than finite copper of glass substrate. CuInS2 and CuGaS2 have two major peaks (112), ( 204 / 220 ) was found in the XRD experiment. In the case of the low-temperature photoluminescence measurements of experiments, both compounds have a lot of light-emitting mechanism. A strong emission line at 1.37 eV of CIS and CGS has main emitting wavelength of the glass substrate and the copper respectively 2.489eV and 2.4eV were found in this paper. In addition, the cross-sectional and top-view scanning electron microscopy images characterized the fabricated Cu-In-S and Cu-Ga-S compound as a polycrystalline film of thickness about 0.8 – 1.28μm. We can also seen the different crystal structure grown on different substrates. Furthermore, we know the CIS thin-film chemical equivalent ratio Cu: In: S about 1.56:1.26:2, the CGS thin-film chemical equivalent ratio Cu: Ga: S about 1.44:1.37:2 by the energy dispersive spectrometer (EDS). In this paper, Cu-In-S and Cu-Ga-S ternary compounds successfully preparation by AP-MOCVD has been established.