In this study, we used two step annealing and aluminum metal induced method to produce polysilicon film which can be applied to solar cell, and discuss the electrical characteristic of the thin film. The first step annealing of induced amorphous silicon thin film is induced by aluminum metal induced method. The purpose is to reduce crystallizing temperature and process time, because polysilicon film can be induced in a short time. The first annealing step polysilicon film is used as the seeding layer in the second annealing step to induce the thicker amorphous silicon film under different annealing temperatures and time. We analyze the characteristics of the thin film to find a best quality of it that can be applied to solar cell. The results show that the 2μm thick polysilicon thin film can be can induced by second step annealing method under 450℃ in 10 minutes, and the maximum carrier mobility is up to 71.7cm2/V-s in this study. Comparing to the references that obtain the polysilicon thin film under 1000℃ annealing 1 hour, aluminum metal induced method has the advantages of shorter processing time and lower crystallizing temperature. The lateral direction of the grain of induced polysilicon thin film by this method is larger than the vertical direction of that. This method can enhance the carrier mobility that is higher than SPC method and overcome the defect of the residual stress under high temperature and the small grain size. The composition of most polysilicon and amorphous silicon thin film are silicon, so it can reduce the mismatch of lattice constant produced in process and the numbers of the deficiency to improve the growth rate and decrease the growth time.