In terms of general electronic study, Negative Differential Resistor (NDR) often refers to RTD, Resonance Transient Diode. RTD is consisted of composition of semi-conductor material, high electron moving efficiency is most notable character of this material. However, difficulties of CMOS/BiCMOS manufacturing process remain the biggest challenge to over-come low reliable/yield production output. NDR is a widely used component across multiple purpose in the industry, the demand is high and solution has to be found. Therefore, our research focus on a different material approach, we used Metallic Oxide Semi-conductor field effect transistor as our main structure. We adopted SiGe 0.35um 3P3M BiCMOS manufacturing technology by utilizing two enhanced N channel MOS components and one enhanced P channel MOS component and one HBT component to structure our new design. (MOS-HBT-NDR) We observed different peak/valley value by adjusting width/length of MOS component and controlling gate voltage input. Therefore, this new approach has a wide range of electronic characteristic curve available for different engineering applications. Further research and development have high value for alternative design applications. We use Negative Differential Resistance Devices to apply and design in D Flip Flop、Frequency Divider、Oscillator Circuit and Logic Circuit.