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  • 學位論文

研製具有選區成長橫向氧化鋅奈米柱之紫外光偵測器

Characterization and Fabrication of UV Photodetectors with Selective Grown Lateral ZnO Nanorods

指導教授 : 姬梁文
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摘要


本研究將分為二個部份來討論,第一部分討論一維形式(One-dimensional)橫向氧化鋅奈米柱(ZnO nanorods : ZnO NRs)形貌,對不同濃度及生長時間下作形貌上分析。第二部分為選區成長橫向(Selective grown lateral)氧化鋅奈米柱之金半金光偵測器(metal-semiconductor-metal photodetectors; MSM PDs),此部分對元件作I-V量測與光響應度的特性分析。 本實驗透過微影製程與射頻磁控濺鍍(radio frequency magnetron sputtering)系統將氧化鋅奈米柱之成核層部分在選區成長位置以利奈米柱作為橫向成長方向。我們使用低溫水溶液法製備橫向氧化鋅奈米柱且可自由控制直徑與依照光罩的限定長度來達到兩電極間之聯結,利用奈米柱單晶結構特性大幅增加電子的傳輸速度,大幅提升元件之特性。 本文研究使用鋁(Al)作為接觸電極,在材料部份經由X光繞射頻譜分析(XRD)、高解析度穿透式電子顯微鏡(High-Resolution Transmission Electron Microscope,HR-TEM)、成分分析(energy-dispersive spectrometry : EDS)以及場發射電子顯微鏡(FE-SEM)檢驗橫向奈米柱的品質。在形貌分析上,在控制濃度與生長時間的情況下,本研究發現在硝酸鋅(Zinc nitrate)比六亞甲基四環安(HMTA)濃度為0.04,生長時間為6小時下有一個最完美的形貌,能平形且完整的連接兩電極作為元件的通道層使用。在光偵測器(Photodetector)部分,發現橫向氧化鋅柱光偵測元件在濃度為Zinc nitrate:HMTA=0.04:0.04與生長時間為6小時下具有高的光應度(Responsivity) 13.87 A/W,其中紫外光到可見光互斥比(UV-to-visible rejection ratio; R380/R450)達到 103.63。不論如何,在這些研究中經由簡單以及低成本的技術可製作出氧化鋅為基材的元件,在未來具備將發展整合光電積體電路(OEIC,OptoElectronic Integrated Circuits) 。

並列摘要


This study will be divided into two parts to be discussed, the first part of the discussion in the form of a one-dimensional (One-dimensional) lateral zinc oxide nanorods (ZnO nanorods: ZnO NRs) morphology, different concentrations on morphology and growth time testimony analysis. The second part is the growth of lateral (Selective grown lateral) gold nanorods of zinc oxide and a half gold detectors (metal-semiconductor-metal photodetectors; MSM PDs) constituency, this part of the element for measuring IV characteristics of the light responsiveness analysis. The experiment by lithography process and RF magnetron sputtering (radio frequency magnetron sputtering) system nucleation layer portion of the zinc oxide nanorods grow nanorods position in favor of the constituency has grown as a lateral direction. We were prepared using a low temperature aqueous solution of zinc oxide nanorods laterally and can be freely controlled diameter and length according to the mask is defined to achieve the coupling between the two electrodes, the use of single crystal nanorods substantial increase in the structural characteristics of the electron transfer rate, boost element the properties In this paper, the use of aluminum (Al) as a contact electrode, via X-ray diffraction spectrum analysis (XRD), high resolution transmission electron microscope (High-Resolution Transmission Electron Microscope, HR-TEM), component analysis in material part (energy-dispersive spectrometry: EDS) and field emission electron microscope (FE-SEM) test lateral nanorods quality. On the morphology analysis, in the case of controlling the concentration of the growth time, the study found that zinc nitrate (Zinc nitrate) ratio of hexamethylene Fourth Ring Ann (HMTA) at a concentration of 0.04, the growth time for the next six hours one of the most perfect shape, flat shape and can be connected to two electrodes complete used as the channel layer element. In light detector (Photodetector) section, found zinc oxide column transverse optical detection element at a concentration of Zinc nitrate: HMTA = 0.04: 0.04 and growth time should have a high degree of light (Responsivity) 6 hours 13.87 A / W wherein the ratio of ultraviolet to visible light are mutually exclusive (UV-to-visible rejection ratio; R380 / R450) to reach 103.63. In any case, in these studies via a simple and low-cost technologies to produce zinc oxide as a base material component in the future with the development of integrated optoelectronic integrated circuits (OEIC, OptoElectronic Integrated Circuits).

並列關鍵字

Lateral zinc oxide nanorods UV detector

參考文獻


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被引用紀錄


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陳威志(2016)。具有選區成長橫向氧化鋅奈米柱之場效電晶體特性研究〔碩士論文,國立虎尾科技大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0028-0408201622595800

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