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Abstract
I. INTRODUCTION
II. DEVICE STRUCTURE AND SIMULATION METHOD
III. RESULTS AND DISCUSSION
IV. CONCLUSIONS
REFERENCES
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Tsormpatzoglou, A., Dimitriadis, C. A., Clerc, R., Rafhay, Q., Pananakakis, G., and Ghibaudo, G. “Semi-analytical modeling of short-channel effects in Si and Ge symmetrical double-gate MOSFETs.” IEEE Transactions on Electron devices, vol. 54, no. 8, pp. 1943-1952. Aug. 2007
Khan, M. U., Arshad, A., Ume, S., Bukhari, R., Samer, A., and Tariq, F. “Nanoscale CMOS Scaling Trends, Challenges and Their Solutions.” ICAME21, International Conference on Advances in Mechanical Engineering, Pakistan, pp. 1-10. Aug. 2021
Takeuchi, H., Wong, H. Y., Ha, D., and King, T. J. “Impact of oxygen vacancies on high-κ gate stack engineering.”. IEEE International Electron Devices Meeting, pp. 829-832. Dec. 2004.
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