Simulation Study on Silicon-Based Floating Body Synaptic Transistor with Short- and Long-Term Memory Functions and Its Spike Timing-Dependent Plasticity

Hyungjin Kim; Seongjae Cho; Min-Chul Sun; Jungjin Park; Sungmin Hwang; Byung-Gook Park

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대한전자공학회
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 학술저널
Journal of Semiconductor Technology and Science Vol.16 No.5
2016.10 657 - 663 (7page)

저자정보

Hyungjin Kim (Seoul National University)
Seongjae Cho (Gachon University)
Min-Chul Sun (Samsung Electronics)
Jungjin Park (Seoul National University)
Sungmin Hwang (Seoul National University)

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In this work, a novel silicon (Si) based floating body synaptic transistor (SFST) is studied to mimic the transition from short-term memory to long-term one in the biological system. The structure of the proposed SFST is based on an n-type metal-oxide-semiconductor field-effect transistor (MOSFET) with floating body and charge storage layer which provide the functions of short- and long-term memories, respectively. It has very similar characteristics with those of the biological memory system in the sense that the transition between short- and long-term memories is performed by the repetitive learning. Spike timing-dependent plasticity (STDP) characteristics are closely investigated for the SFST device. It has been found from the simulation results that the connectivity between pre- and post-synaptic neurons has strong dependence on the relative spike timing among electrical signals. In addition, the neuromorphic system having direct connection between the SFST devices and neuron circuits are designed.

#Neuromorphic system #synaptic transistor #short- and long-term memory #spike timing-dependent plasticity (STDP)