Impacts of Trapezoidal Fin of 20-nm Double-Gate FinFET on the Electrical Characteristics of Circuits

Myunghwan Ryu; Youngmin Kim

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대한전자공학회
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 학술저널
Journal of Semiconductor Technology and Science Vol.15 No.4
2015.8 462 - 470 (9page)

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Myunghwan Ryu (Ulsan National Institute of Science and Technology (UNIST))
Youngmin Kim (Kwangwoon University)

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In this study, we analyze the impacts of the trapezoidal fin shape of a double-gate FinFET on the electrical characteristics of circuits. The trapezoidal nature of a fin body is generated by varying the angle of the sidewall of the FinFET. A technology computeraided-design (TCAD) simulation shows that the onstate current increases, and the capacitance becomes larger, as the bottom fin width increases. Several circuit performance metrics for both digital and analog circuits, such as the fan-out 4 (FO4) delay, ring oscillator (RO) frequency, and cut-off frequency, are evaluated with mixed-mode simulations using the 3D TCAD tool. The trapezoidal nature of the FinFET results in different effects on the driving current and gate capacitance. As a result, the propagation delay of an inverter decreases as the angle increases because of the higher on-current, and the FO4 speed and RO frequency increase as the angle increases but decrease for wider angles because of the higher impact on the capacitance rather than the driving strength. Finally, the simulation reveals that the trapezoidal angle range from 10° to 20° is a good tradeoff between larger on-current and higher capacitance for an optimum trapezoidal FinFET shape.

#FinFET #trapezoidal fin shape #multigate transistor #double gate #SOI FinFET #mixed-mode 3D TCAD