This is a page describing data taken during an experiment at the ISIS Neutron and Muon Source. Information about the ISIS Neutron and Muon Source can be found at https://www.isis.stfc.ac.uk.
Direct spectroscopy of muon donor and acceptor levels in silicon carbide
Abstract: We will perform direct laser spectroscopy to measure the ionisation energy of muon defect levels in a semiconductor - specifically silicon carbide. We should see a broad absorption band with a sharp cutoff at low energy. Time domain data, particularly in low transverse fields, will confirm which muon sites or charge states are involved. We will follow the ionisation edge and therefore defect depth as a function of temperature.
Public release date: 23 May 2020
Principal Investigator: Dr James Lord
Experimenter: Dr P.W. Mengyan
Experimenter: Mr Jarryd Horn
Experimenter: Professor Alan Drew
Experimenter: Professor Roger Lichti
Experimenter: Dr Koji Yokoyama
DOI: 10.5286/ISIS.E.86389933
Parent DOI: 10.5286/ISIS.E.RB1710134
ISIS Experiment Number: RB1710134
Part Number: 1
Date of Experiment: 18 May 2017
Publisher: STFC ISIS Neutron and Muon Source
Data format: RAW/Nexus
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Data Citation
The recommended format for citing this dataset in a research
publication is as:
[author], [date], [title], [publisher],
[doi]
For Example:
Dr James Lord et al; (2017): Direct spectroscopy of muon donor and acceptor levels in silicon carbide, STFC ISIS Neutron and Muon Source, https://doi.org/10.5286/ISIS.E.86389933