GIQS - Graphene Impedance Quantum Standard
Published November 26, 2020 | Version 1.0
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Datasets of Momeni Pakdehi et al, Adv. Funct. Mater. 2004695 (2020), "Silicon Carbide Stacking-Order-Induced Doping Variation in Epitaxial Graphene"

Creators

  • 1. Physikalisch‐Technische Bundesanstalt, Bundesallee 100, Braunschweig, 38116 Germany
  • 2. Institut für Physik, Technische Universität Chemnitz, Reichenhainer Straße 70, Chemnitz, 09126 Germany
  • 3. MAXIV laboratory, Lund, 22484 Sweden

Description

Compilation of the datasets used to generate the figures in the following journal paper:

"Silicon Carbide Stacking-Order-Induced Doping Variation  in Epitaxial Graphene" by Davood  Momeni Pakdehi et al,  Adv. Funct. Mater.  2004695 (2020), DOI: 10.1002/adfm.202004695

Notes

This work was supported in part by the Joint Research Project GIQS (18SIB07). This project received funding from the European Metrology programme for Innovation and Research (EMPIR) co-financed by the Participating States and from the European Unions' Horizon 2020 research and innovation programme. Funder ID: 10.13039/100014132 , Grant no: 18SIB07. The authors also acknowledge funding from the European Commission Graphene Flagship Core2 (grant agreement 785219), Deutsche Forschungsgemeinschaft  under Germany's Excellence Strategy – EXC-2123 QuantumFrontiers – 390837967, and support from Stiftelsen för Strategisk Forskning (project RMA15-0024).

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Additional details

Related works

Is supplemented by
Journal article: 10.1002/adfm.202004695 (DOI)

Funding

GrapheneCore2 – Graphene Flagship Core Project 2 785219
European Commission