Graphene/h-BN Heterostructure Interconnects
Creators
Description
The material behavior of graphene, a single layer of
carbon lattice, is extremely sensitive to its dielectric environment. We
demonstrate improvement in electronic performance of graphene
nanowire interconnects with full encapsulation by lattice-matching,
chemically inert, 2D layered insulator hexagonal boron nitride (h-
BN). A novel layer-based transfer technique is developed to construct
the h-BN/MLG/h-BN heterostructures. The encapsulated graphene
wires are characterized and compared with that on SiO2 or h-BN
substrate without passivating h-BN layer. Significant improvements
in maximum current-carrying density, breakdown threshold, and
power density in encapsulated graphene wires are observed. These
critical improvements are achieved without compromising the carrier
transport characteristics in graphene. Furthermore, graphene wires
exhibit electrical behavior less insensitive to ambient conditions, as
compared with the non-passivated ones. Overall, h-BN/graphene/h-
BN heterostructure presents a robust material platform towards the
implementation of high-speed carbon-based interconnects.
Files
10003969.pdf
Files
(311.4 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:6dadb8bc62b7b06c46e6bd19c6ef9e32
|
311.4 kB | Preview Download |
Additional details
References
- W. Steinhogl, G. Schindler, G. Steinlesberger, M. Traving, and M, Engelhardt, "Comprehensive study of the resistivity of copper wires with lateral dimensions of 100 nm and smaller," Journal of Applied Physics, 97, 023706–023706–7, 2005.
- G. Steinlesberger, M. Engelhardt, G. Schindler, W. Steinhögl, A. Von Glasow, K. Mosig, and E. Bertagnolli, "Electrical assessment of copper damascene interconnects down to sub-50 nm feature sizes Microelectronic Engineering, 64, 409–16, 2002.
- J. A. Davis, R. Venkatesan A. Kaloyeros, M. Beylansky, S. J. Souri, K. Banerjee, K. C. Saraswat, A. Rahman, R. Reif, and J. D. Meindl, "Interconnect limits on gigascale integration (GSI) in the 21st century," Proceedings of the IEEE, 89, 305–24, 2001.
- P. C. Wang, and R. G. Filippi, "Electromigration threshold in copper interconnects," Applied Physics Letters, 78, 3598–600, 2001.
- A. K. Geim and K. S. Novoselov, "The rise of graphene," Nature Materials, 6, 183–91, 2007.
- J. H. Chen, C. Jang, S. Xiao, M. Ishigami, and M. S. Fuhrer, "Intrinsic and extrinsic performance limits of graphene devices on SiO2," Nature Nanotechnology, 3, 206–9, 2008.
- C. R. Dean, A. F. Young, I. Meric, C. Lee, L. Wang, S. Sorgenfrei, K. Watanabe, T. Taniguchi, P. Kim, K. L. Shepard, and J. Hone, "Boron nitride substrates for high-quality graphene electronics, Nature Nanotechnology, 5, 722–6, 2010.
- N. Jain, T. Bansal, C. Durcan, and B. Yu, "Graphene-Based Interconnects on Hexagonal Boron Nitride Substrate," IEEE Electron Device Letters, 33, 925–7, 2012.
- X. Zhong , R. G. Amorim, R. H. Scheicher, R. Pandey, and S. P. Karna, "Electronic structure and quantum transport properties of trilayers formed from graphene and boron nitride," Nano scale, 4, 5490–8, 2012. [10] A. S. Mayorov, R. V. Gorbachev, S. V. Morozov, L. Britnell, R. Jalil, L. A. Ponomarenko, P. Blake, K. S. Novoselov, K. Watanabe, T. Taniguchi, and A. K. Geim, "Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature," Nano Letter, 11, 2396– 9, 2011. [11] H. Wang, T. Taychatanapat, A. Hsu, K. Watanabe, T. Taniguchi, P. Jarillo-Herrero, and T. Palacios, "BN/Graphene/BN Transistors for RF Applications," IEEE Electron Device Letters, 32 1209–11, 2011.