Design and Characterization of CMOS Readout Circuit for ISFET and ISE Based Sensors
Description
This paper presents the design and characterization of analog readout interface circuits for ion sensitive field effect transistor (ISFET) and ion selective electrode (ISE) based sensor. These interface circuits are implemented using MIMOS’s 0.35um CMOS technology and experimentally characterized under 24-leads QFN package. The characterization evaluates the circuit’s functionality, output sensitivity and output linearity. Commercial sensors for both ISFET and ISE are employed together with glass reference electrode during testing. The test result shows that the designed interface circuits manage to readout signals produced by both sensors with measured sensitivity of ISFET and ISE sensor are 54mV/pH and 62mV/decade, respectively. The characterized output linearity for both circuits achieves above 0.999 rsquare. The readout also has demonstrated reliable operation by passing all qualifications in reliability test plan.
Files
17148.pdf
Files
(262.4 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:c7f4ea819c1cab0a2b1074773168d7b5
|
262.4 kB | Preview Download |
Additional details
References
- P. Bergveld, "Development of an ion-sensitive solid-state device for neurophysiological measurement," IEEE Trans. on Biomed. Eng., vol. BME-17, pp.70-71.1970.
- D. Y. Chen, P. K. Chan and M. S. Tse, "A CMOS ISFET interface circuit for water quality monitoring", Proc. IEEE Conference on Sensors, pp. 1217-1220, Nov. 2005.
- B. D. Liu, Y. K. Su and S. C. Chen, "Ion sensitive field effect transistor with silicon nitride gate for pH sensing", Int. J. Electronics, 67, pp.59- 63, 1989.
- L. Ravczzi, P. Conci, "ISFET sensor coupled with CMOS read-out circuit microsystem", Electron. Lett. 34, pp.2234–2235, 1998.
- B. Palan, F.V. Santos, J.M. Karam, B. Courtois, M. Husak, "NewISFET sensor interface circuit for biomedical applications", Sens. Actuators B: Chem.57, pp.63–68, 1999.
- A. Morgenshtein, L. Sudakov-Boreysha, U. Dinnar, C.G. Jakobson,Y. Nemirovsky, "CMOS readout circuitry for ISFET microsystems",Sens. Actuators B: Chem. 97, pp.122–131, 2004.
- W. Y. Chung, C. H. Yang, G. Pijanowska, A. Krzyskow, W. Torbicz, "ISFET interface circuit embedded with noise rejection capability",Electron. Lett. 40, pp.1115-1116, 2004.
- W. Y. Chung, C. H. Yang, M. C. Wang, D. G. Pijanowska and W. Torbicz, "Temperature compensation electronics for ISFET readout application," IEEE International Workshop on Biomedical Circuit and System, 2004.
- T. Matsuo, and M. Esashi, "Method of ISFET fabrication", Sensors and Actuators, vol. 1, pp. 77-96, 1981. [10] Wen-Yaw Chung, Febus Reidj G. Cruz, Chung-Huang Yang, Fu-Shun He, Tai-Tsun Liu, Dorota G. Pijanowska, Wladyslaw Torbicz, Piotr B. Grabiec and Bohdan Jarosewicz (2010). CMOS Readout Circuit Developments for Ion Sensitive Field Effect Transistor Based Sensor Applications, Solid State Circuits Technologies, Jacobus W. Swart (Ed.), ISBN: 978-953-307-045-2, InTech, DOI: 10.5772/6891. [11] P. Bühlmann and L. D. Chen,"Ion-Selective Electrodes with Ionophore- Doped Sensing Membranes". Supramolecular Chemistry: From Molecules to Nanomaterials; Wiley; New York, NY: 2012. [12] G. H. Wang, D. Yu, and Y. L. Wang "ISFET temperature characteristics," Sensors and Actuators, vol. 11, pp. 221-237, 1987. [13] S. Martinoia and G. Massobrio, "A behavioral macromodel of the ISFET in SPICE," Sensors and Actuators B: Chem.62, pp.182-189, 2000.