Comparative Analysis of Silicon and MoS2 based Tunnel Field-Effect Transistor

Molybdenum Disulfide (MoS2) is the area of attention due to its wide variety of potential in electrical and optoelectronic devices. High-performance transistors may use nanomaterials in the future. In this paper, we have reported a comparison study MoS2 based TFET and Silicon-based tunnel field-effect transistor (TFET) structures with a channel length of 10 nm. The step structure has been used for both the device to increase the tunneling as the energy gap varies with the number of MoS2 layers. In step structured devices, the MoS2 based TFET has shown better Vth, Subthreshold Swing (SS), and ION/IOFF ratio values that are 0.39V, 7.09 mV/decade and 1013, respectively. The comparison of two simulated devices has been done on based of transfer characteristics, energy band diagram, output characteristics, potential filed, electric field and BTBT rate.