D5.1 - Compressed nano-FTIR Hyperspectral Imaging for Characterizing Defects in Semiconductors
- Event
- SMSI 2023
2023-05-08 - 2023-05-11
Nürnberg - Band
- Lectures
- Chapter
- D5 - Metrology of compound semiconductors for manufacturing power electronics
- Author(s)
- B. Kästner, C. Elster, A. Hoehl, M. Marschall, D. Siebenkotten, G. Wübbeler - Physikalisch-Technische Bundesanstalt, Berlin (Germany), E. Rühl - Freie Universität Berlin, Berlin (Germany), S. Wood - National Physical Laboratory, Teddington (United Kingdom)
- Pages
- 231 - 232
- DOI
- 10.5162/SMSI2023/D5.1
- ISBN
- 978-3-9819376-8-8
- Price
- free
Abstract
In the field of power electronics, the ongoing development of wide-bandgap compound semiconductors is limited by material defects, which compromise device performance and reliability. New metrological tools are required with high sensitivity to local material properties, such as noninvasive nano-FTIR hyperspectral imaging to map properties such as: crystal structure, carrier density, or strain on the nanoscale. However, full spatio-spectral imaging is constrained by long measurement times. Here we discuss a compression method that allows us to reduce the measurement time by up to 90%.