A Study on the Safe Hydrogen Exhaust Method in the Semiconductor Industry

June 30, 2021  |  Vol.7, No.6  |  PP. 1-10  | PDF

AUTHORS:

Seongmin Seo, Future Technology R&D, SKHynix Semiconductor, Korea

Yong-Won Song, Dept. Nano & Semiconductor Engineering, Polytechnic University, Korea

KEYWORDS:

Hydrogen Exhaust Safety System, Hydrogen Plasma Treatment Unit, TRIZ, Function- Oriented Search, Split-plot

Abstract

This study proposed a solution to prevent explosion accidents that may occur in the process of exhausting hydrogen in the semiconductor industry. Furthermore, it developed a hydrogen plasma treatment unit (HPTU) that converts exhausted hydrogen gas into safe water vapor using function-oriented search (FOS), which is one of the TRIZ tools. Also, the core technology of the renewable energy industry was applided to convert a greenhouse gas into clean energy using a plasma carbon conversion unit (PCCU). The correlation between the decomposition rate and each factor was found through the experiment of plasma decomposition and chemical reaction by mixing oxygen with exhausted hydrogen. The decomposition rate is higher as the amount of hydrogen decreases or both oxygen and RF power increases. Based on the experiment, the optimal combination of degradation rates was determined. With 9.17slm of hydrogen, 20slm of oxygen and 4.93kW of RF power, the decomposition rate is 100%. Data was collected through the design of experimental using the split-plot design, and the data was optimized using the JMP statistical program provided by SAS. A hydrogen exhaust safety system was constructed by combining HPTU ans hydrogen dilution unit (NDU), ang the system operation experiment was conducted. Using 40slm of hydrogen, which is 4 times that of the existing system, the result was obtained that the concentration in the non-explosive range could bo controlled. The construction of hydrogen exhaust safety system suggested a new method to prevent serious industrial accidents by using a large amount of hydrogen used in semiconductor process development and then discharging it in a safe state.

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Citations:

APA:
Seo, S., Song, Y.-W. (2021). A Study on the Safe Hydrogen Exhaust Method in the Semiconductor Industry. Asia-pacific Journal of Convergent Research Interchange (APJCRI), ISSN: 2508-9080 (Print); 2671-5325 (Online), FuCoS, 7(6), 1-10. doi: 10.47116/apjcri.2021.06.01

MLA:
Seo, Seongmin, et al. “A Study on the Safe Hydrogen Exhaust Method in the Semiconductor Industry.” Asia-pacific Journal of Convergent Research Interchange, ISSN: 2508-9080 (Print); 2671-5325 (Online), FuCoS, vol. 7, no. 6, 2021, pp. 1-10. APJCRI, http://fucos.or.kr/journal/APJCRI/Articles/v7n6/1.html.

IEEE:
[1] S. Seo, Y.-W. Song, “A Study on the Safe Hydrogen Exhaust Method in the Semiconductor Industry.” Asia-pacific Journal of Convergent Research Interchange (APJCRI), ISSN: 2508-9080 (Print); 2671-5325 (Online), FuCoS, vol. 7, no. 6, pp. 1-10, June 2021.

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