Mobility and Resistivity Tool

By Ivan Santos1; Stephanie Michelle Sanchez1; Stella Quinones1

1. University of Texas at El Paso

Understand how doping affects mobility and resistivity.

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Archive Version 1.0
Published on 26 Jun 2012 All versions

doi:10.4231/D3BN9X25P cite this

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Tools

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Abstract

This tool calculates the electron and hole mobility in a semiconductor as well as its resistivity as a function of doping at room temperature (300K) using an empirical curve fit model for the electron and hole mobility.

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NCN UTEP Research Team

Sponsored by

This project is supported by NSF NCN Grant EEC-0634750.

References

[1] R. Pierret, Semiconductor Device Fundamentals. Addison Wesley Longman, 1996. [2] C. C. Hu, Modern Semiconductor Devices for Integrated Circuits. Upper Saddle River, NJ: Pearson, 2010.

Cite this work

Researchers should cite this work as follows:

  • Ivan Santos, Stephanie Michelle Sanchez, Stella Quinones (2014), "Mobility and Resistivity Tool," https://nanohub.org/resources/mobiresis. (DOI: 10.4231/D3BN9X25P).

    BibTex | EndNote

Tags

  1. doping
  2. mobility
  3. nanoelectronics
  4. NCN Group - Semiconductor Device Physics
  5. resistivity
  6. semiconductors