10-μm-thick non-hydrogenated amorphous-silicon (a-Si) films were deposited at relatively high rates (≥ 10 Å/s) by radio-frequency magnetron sputtering (RFMS) on different large-area buffer-layer-coated glass substrates at deposition temperatures ranging from room temperature (RT) to 300ºC. These amorphous samples were subsequently crystallized by means of a continuous-wave diode laser, looking for conditions to reach liquid-phase crystallization. The influence of deposition conditions on the quality of the final micro-crystalline silicon films has been studied.