In this paper, we report a novel manufacturing process sequence for POLO IBC solar cells applying a local PECVD SiOxNy/n-a-Si deposition through a glass shadow mask to form the structured carrier selective n-polySi layer in one process step. Using a lab-type single-wafer PECVD tool, the POLO IBC precursors without metal contacts exhibit an excellent implied Voc of 741 mV. A TEM analysis confirms that the N2O in-situ plasma oxidation indeed incorporates N in the interfacial SiOxNy layer which could facilitate the excellent firing stable surface passivation. The laser contact openings and screen-printed Al and Ag rear contacts were successfully aligned to the shadow mask features within ± 20 µm precision. Fully processed POLO IBC solar cells on M2-sized Ga-doped Cz wafers exhibit conversion efficiencies of up to 23.0% with Voc=708 mV, Jsc =41.2 mA/cm2 and FF=78.7%. We attribute the 33 mV difference between implied Voc and Voc to additional J0 contributions of the Ag and Al metal contacts which is subject to future improvements. As next step towards POLO IBC mass production readiness, we transfer the PECVD SiOxNy/n-a-Si process through shadow masks from the single-wafer lab-tool to a massproduction c.plasma PECVD tool from centrotherm, which is installed at the ISFH SolarTeC. Test wafers with double-sided in-situ PECVD SiOxNy/n-a-Si deposition reveal an excellent J0 = 3 fA/cm2 after annealing, SiN capping and firing. We apply the glass shadow mask in the industrial c.plasma PECVD tool in combination with the PECVD SiOxNy/n-a-Si deposition. The first POLO IBC solar cells processed with the c.plasma tool with shadow masks achieve conversion efficiencies up to 22.3% and average Voc values of 710 mV. In the future, we aim at further increasing the conversion efficiency towards 25% and implementing an automated shadow mask loading into the industrial c.plasma tool.