| Title | Changes in Temperature-Coefficient of the Diode Model Caused by Light-Induced Degradation of a-Si/µc-Si Solar Cells |
| Author(s) | Johannes Arto Weicht, Frank U. Hamelmann, Grit Behrens |
| Keywords | Degradation, Simulation, a-Si/µ-Si |
| Topic | THIN FILM SOLAR CELLS AND MODULES |
| Subtopic | Silicon-based Thin Film Solar Cells and Modules |
| Event | EU PVSEC 2016 |
| Session | 3DV.1.4 |
| Pages manuscript | 1253 - 1255 |
| ISBN | 3-936338-41-8 |
| DOI | 10.4229/EUPVSEC20162016-3DV.1.4 |
In our work we observe the temperature coefficients before and after light-induced degradation of amorphous/micro-crystalline (a-Si/μc-Si) tandem silicon-based solar cells. We show that during light-induced degradation the temperature parameters of the serial and parallel resistance, photo current and the saturation current in the diode model change: the temperature has a stronger effect after the light-induced degradation, the temperaturecoefficient of silicon-based thin film solar cells varies during the light-induced degradation.
