Damage to the target wafer is an unavoidable characteristic of ion implantation. Provided sufficient damage is created in the target wafer, an amorphous region will form which may then be recrystallised by solid phase epitaxial regrowth. In this study, phosphorus ions were implanted at varied dose and energy into crystalline silicon wafers and annealed at 600°C for 10 minutes to allow for epitaxial regrowth. It is found that this annealing regime activates dopants within the regrown amorphous layer, however the J0n+ after SPER is significantly higher compared with equivalent samples that were annealed at high temperature. We attributed this to increased S-R-H recombination in regions damaged, but not amorphised, during implantation. Due to high active dopant concentration after recrystallisation, phosphorus implantation and SPER may present a low thermal budget alternative for forming localised N+ regions under electrical contacts.