Title | InP/InGaAsP Heterostructures for Hot Carrier Solar Cells (HCSC) |
Author(s) | Jean Rodière, Laurent Lombez, Jean-Francois Guillemoles, Hervé Folliot, Olivier Durand |
Keywords | Hot Carrier, Characterisation, Characterization, Quasi Fermi Level Splitting |
Topic | MATERIAL STUDIES, NEW CONCEPTS, ULTRA-HIGH EFFICIENCY AND SPACE TECHNOLOGY |
Subtopic | New Materials and Concepts for Cells |
Event | 28th EU PVSEC |
Session | 1DO.4.3 |
Pages manuscript | 127 - 128 |
ISBN | 3-936338-33-7 |
DOI | 10.4229/28thEUPVSEC2013-1DO.4.3 |
We investigated a semiconductor heterostructure based on InGaAsP multi quantum wells using optical and electrical characterizations. The optical analysis allows us to probe the potential of such a structure in the scope of hot carrier solar cell device. Using different photoluminescence techniques, the quasi Fermi level splitting μ is estimated as a function of the excitation power. High value of μ is found as well as high carrier temperature. These results are compared to electrical measurements.