A concept for large-area high-rate VHF-PECVD (60 MHz) of a-Si:H and μc-Si:H on moving substrates is developed and evaluated. Up to 40x40 cm² substrates can be used. The deposition plasma is sustained between linear electrodes and a moving substrate. Due to the gas flow geometry and the high degree of source gas depletion, the moving substrate "sees" different silane concentrations when passing the electrodes. These effects are smeared out and state-ofthe- art solar cells are produced by this reactor. Initial solar cell efficiencies reached up to 9.8% which is the same as for the reference cells deposited by RF-PECVD. However, the deposition rates of a-Si are higher for VHF (~5 Å/s) than for RF (~2 Å/s). For μc-Si solar cells with an efficiency of 7.6% a deposition rate of 9.5 Å/s has been obtained. Standard μc- Si solar cells deposited by RF-PECVD showed efficiencies up to 8.6 % at growth rates of 5.4 Å/s.