We present a novel laser doping process with sputtered boron precursor layers. The sub nanometer thin boron layers act as a finite dopant source during the laser doping process. By adjusting the boron precursor thickness and the laser pulse energy density, the presented process provides an elegant way to tailor the emitter achieving a very wide range of boron surface concentrations from 2×1019 cm-3 to 2×1020 cm-3 and emitter depths from 100 nm to 500 nm. By varying the precursor layer thickness and pulse energy density, the emitter profiles, measured by secondary ion mass spectrometry are conveniently adjustable. The Combination of the presented laser doping process with the high spatial resolution of the laser beam provides an elegant way to create boron emitters, selective emitters and (local) back surface field applications.