Applying an a-Si passivation layer to the rear-side of a screen-printed Al-p+ emitter on an n+np+ solar cell structure fabricated on 3 Ωcm n-type phosphorus-doped Cz-Si, we achieve an independently confirmed conversion efficiency of 20%. In a second approach, we apply an Al2O3/SiNx passivation stack to the screen-printed Al-p+ emitter surface of our solar cells, where we demonstrate a conversion efficiency of 19.8% and a record-high open-circuit voltage of 649 mV. Furthermore, we introduce an industrial-type n-type Cz-Si solar cell featuring a screen-printed Al-p+ emitter at the rear and a selective front surface field at the front. This cell has an area of 100 cm2 and shows a stable conversion efficiency of 18.0%. This is the highest efficiency reported so far for an all-screen-printed n-type solar cell on Cz-Si without any boron diffusion.