Superior Short Circuit Performance of 1.2kV SiC JBSFETs Compared to 1.2kV SiC MOSFETs

Ajit Kanale; Ki Jeong Han; B. Jayant Baliga; Subhashish Bhattacharya

doi:10.4028/www.scientific.net/MSF.963.797

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HomeMaterials Science ForumMaterials Science Forum Vol. 963Superior Short Circuit Performance of 1.2kV SiC...

Superior Short Circuit Performance of 1.2kV SiC JBSFETs Compared to 1.2kV SiC MOSFETs

Abstract:

The high-temperature switching performance of a 1.2kV SiC JBSFET is compared with a 1.2kV SiC MOSFET using a clamped inductive load switching circuit representing typical H-bridge inverters. The switching losses of the SiC MOSFET are also evaluated with a SiC JBS Diode connected antiparallel to it. Measurements are made with different high-side and low-side device options across a range of case temperatures. The JBSFET is observed to display a reduction in peak turn-on current – up to 18.9% at 150°C and a significantly lesser turn-on switching loss – up to 46.6% at 150°C, compared to the SiC MOSFET.

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Silicon Carbide and Related Materials 2018

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Periodical:

Materials Science Forum (Volume 963)

Pages:

797-800

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.797

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Online since:

July 2019

Authors:

Ajit Kanale*, Ki Jeong Han, B. Jayant Baliga, Subhashish Bhattacharya

Keywords:

High Temperature Switch, JBSFET, Power MOSFET, Silicon Carbide, Third Quadrant

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* - Corresponding Author

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