Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC

Rabia Y. Khosa; J.T. Chen; K. Pálsson; Robin Karhu; Jawad Hassan; Niklas Rorsman; E.Ö. Sveinbjörnsson

doi:10.4028/www.scientific.net/MSF.963.460

Paper Titles

Decoration of Al Implantation Profiles in 4H-SiC by Bevel Grinding and Dry Oxidation
p.441

Determination of Compensation Ratios of Al-Implanted 4H-SiC by TCAD Modelling of TLM Measurements
p.445

Characterization of Ba-Introduced Thin Gate Oxide on 4H-SiC
p.451

Study of the Post-Oxidation-Annealing (POA) Process on Deposited High-Temperature Oxide (HTO) Layers as Gate Dielectric in SiC MOSFET
p.456

Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC
p.460

Improved SiO₂/ 4H-SiC Interface Defect Density Using Forming Gas Annealing
p.465

Improved Field Effect Mobility in Si-Face 4H-SiC MOSFETs with a Deposited SiN_x Interface Layer
p.469

Evidence of Channel Mobility Anisotropy on 4H-SiC MOSFETs with Low Interface Trap Density
p.473

Electrical Properties of Thermal Oxide on 3C-SiC Layers Grown on Silicon
p.479

HomeMaterials Science ForumMaterials Science Forum Vol. 963Electrical Characterization of MOCVD Grown Single...

Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC

Abstract:

We report on a very low density of interface traps at the AlN/4H-SiC interface estimated from capacitance-voltage (CV) analysis of metal-insulator-semiconductor (MIS) capacitors. Single crystalline aluminum nitride (AlN) films are grown by metal organic chemical vapor deposition (MOCVD). Current-voltage (IV) analysis shows that the breakdown electric field across the AlN dielectric is 3 MV/cm. By depositing an additional SiO₂ layer on top of the AlN layer it is possible to increase the breakdown voltage of the MIS capacitors significantly without having pronounced impact on the quality of the AlN/SiC interface.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

460-464

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.460

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Online since:

July 2019

Authors:

Rabia Y. Khosa*, J.T. Chen, K. Pálsson, Robin Karhu, Jawad Hassan, Niklas Rorsman, E.Ö. Sveinbjörnsson

Keywords:

AlN/4H-SiC Interface, Interface Traps, MIS Capacitors

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* - Corresponding Author

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