Electrical Performances and Physics Based Analysis of 10kV SiC Power MOSFETs at High Temperatures

Si Yang Liu; B. Jayant Baliga; Yi Fan Jiang; Wei Feng Sun; Subhashish Bhattacharya; Alex Q. Huang

doi:10.4028/www.scientific.net/MSF.924.719

Paper Titles

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Suppression of PBTI of SiC-MOSFETs under 100 kHz Gate-Switching Operation by Using a Gate Off-Voltage of -5 V
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Short-Circuit Robustness of SiC Trench MOSFETs
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Electrical Performances and Physics Based Analysis of 10kV SiC Power MOSFETs at High Temperatures
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Impact of a Kelvin Source Connection on Discrete High Power SiC-MOSFETs
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Suppression of Short-Circuit Current with Embedded Source Resistance in SiC-MOSFET
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3300V SiC DMOSFETs Fabricated in High-Volume 150 mm CMOS Fab
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Effect of Negative Gate Bias on Single Pulse Avalanche Ruggedness of 1.2 kV Silicon Carbide MOSFETs
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HomeMaterials Science ForumMaterials Science Forum Vol. 924Electrical Performances and Physics Based Analysis...

Electrical Performances and Physics Based Analysis of 10kV SiC Power MOSFETs at High Temperatures

Abstract:

Silicon Carbide (SiC) power MOSFETs become more important in 10kV industrial application level, beginning to replace the silicon devices. Due to the harsh environments, high temperature performances of 10kV SiC MOSFETs must be concerned and understood. In this paper, comprehensive static and dynamic parameters of 10kV SiC MOSFETs have been measured up to 225°C. The device physics behind high temperature behaviors has been analyzed by using the basic analytical models.

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Periodical:

Materials Science Forum (Volume 924)

Pages:

719-722

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.924.719

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Online since:

June 2018

Authors:

Si Yang Liu*, B. Jayant Baliga, Yi Fan Jiang, Wei Feng Sun, Subhashish Bhattacharya, Alex Q. Huang

Keywords:

10 kV, High Temperature, MOSFET, Physics, Silicon Carbide (SiC)

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* - Corresponding Author

References

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