Distribution & Access For Publication Downloads News About Us Contact Us
Paper Titles
Multi-Level Trap Assisted Tunneling Model for the Field and Temperature Dependence of SiC-JBS Reverse Leakage Current
p.601
Effect of High Energy Electron Irradiation on Electrical and Noise Properties of 4H-SiC Schottky Diodes
p.605
SiC MPS Devices: One Step Closer to the Ideal Diode
p.609
Design and Manufacturing of 1200V SiC JBS Diodes with Low On-State Voltage Drop and Reverse Blocking Leakage Current
p.613
Breakdown Field Model for 3C-SiC Power Device Simulations
p.617
Analysis of Forward Surge Performance of SiC Schottky Diodes
p.621
A High Current Gain 4H-SiC BJT of Novel Epitaxial Passivation Structure
p.625
Effects of Parasitic Region in SiC Bipolar Junction Transistors on Forced Current Gain
p.629
Blocking Performance Improvements for 4H-SiC P-GTO Thyristors with Carrier Lifetime Enhancement Processes
p.633

Breakdown Field Model for 3C-SiC Power Device Simulations

Article Preview

Abstract:

Modeling and simulation of 3C-SiC power devices such as MOSFETs and diodes requires a model for the breakdown field that is consistent with the Monte-Carlo-simulated ionization rates of electron and holes and supported by experimental results. The challenge one faces is the limited number of publications reporting such calculations and the limited availability of high-quality ionization breakdown data for 3C-SiC diodes. We therefore performed a series of 2D simulations of both n-type and p-type Schottky diodes and p+-n diodes that confirms the general breakdown field trend with doping density obtained from experiments. We uncovered a difference between n-type and p-type diode breakdown behavior, identified the discrepancy between the calculations and the experimental data, and extracted a simple breakdown field model, useful for further 3C-SiC device design and simulation.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2017 View Preview

Info:

Periodical:

Materials Science Forum (Volume 924)

Pages:

617-620

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.924.617

Citation:

Cite this paper

Online since:

June 2018

Authors:

Hamid Fardi, Bart J. Van Zeghbroeck*

Keywords:

3C-SiC, Breakdown Field, Device Modelling, Impact Ionization, P-N Diode, Schottky Diode

Export:

RIS, BibTeX

Price:

Permissions:

Request Permissions

* - Corresponding Author

References

[1] B. Xin, R. Jia, J. Hua, C. Tsai, H. Lin, Y. Zhang, Applied Surface Science 357 (2015) 985–993.

Google Scholar

[2] V. Jokubavicius, et al., Crystal Growth & Design 15 (2015) 2940−2947.

Google Scholar

[3] V. Jokubavicius, et al. Crystal Growth & Design 14 (12) (2014) 6514-6520.

Google Scholar

[4] J. W. Sun, et al., Appl. Phys. Lett. 100 (2012) 252101.

Google Scholar

[5] M. Kobayashi, et al., Materials Science Forum 717-720 (2012) 1109-1112.

Google Scholar

[6] C. W. Liu and J. C. Sturm, J. Appl. Phys. 82 (1997) 4558.

Google Scholar

[7] P. G. Neudeck, D. J. Spry, A. J. Trunek, Materials Science Forum 527-529 (2006) 1335.

Google Scholar

[8] P. G. Neudeck, et al., IEEE Trans. on Electron Devices 41 (1994) 826.

Google Scholar

[9] D. J. Spry, A. J. Trunek, P. G. Neudeck, Materials Science Forum 457-460 (2004) 1061.

Google Scholar

[10] E. Bellotti, H.-E. Nilsson, K. F. Brennan, P. Ruden, J. Appl. Phys. 85 (1999) 3211.

Google Scholar

[11] L. Tirino, M. Weber, and K. F. Brennan, J. Appl. Phys. 94 (2003) 423.

Google Scholar

[12] S. Selberherr, Analysis and Simulation of Semiconductor Devices, Springer-Verlag, (1984).

Google Scholar

[13] Silvaco International, User Manual, (2016).

Google Scholar

[14] http://www.ioffe.ru/SVA/NSM/Semicond/SiC/index.html.

Google Scholar

[15] S.M. Sze, Physics of Semiconductor Devices, second ed., Wiley & Sons, New York, (1980).

Google Scholar

Scientific.Net is a registered brand of Trans Tech Publications Ltd
© 2024 by Trans Tech Publications Ltd. All Rights Reserved