Design and Manufacturing of 1200V SiC JBS Diodes with Low On-State Voltage Drop and Reverse Blocking Leakage Current

Woong Je Sung; Ki Jeong Han; B. Jayant Baliga

doi:10.4028/www.scientific.net/MSF.924.613

Paper Titles

Performance Evaluation of SiC JBS Diodes Rated for 6.5kV Applications
p.597

Multi-Level Trap Assisted Tunneling Model for the Field and Temperature Dependence of SiC-JBS Reverse Leakage Current
p.601

Effect of High Energy Electron Irradiation on Electrical and Noise Properties of 4H-SiC Schottky Diodes
p.605

SiC MPS Devices: One Step Closer to the Ideal Diode
p.609

Design and Manufacturing of 1200V SiC JBS Diodes with Low On-State Voltage Drop and Reverse Blocking Leakage Current
p.613

Breakdown Field Model for 3C-SiC Power Device Simulations
p.617

Analysis of Forward Surge Performance of SiC Schottky Diodes
p.621

A High Current Gain 4H-SiC BJT of Novel Epitaxial Passivation Structure
p.625

Effects of Parasitic Region in SiC Bipolar Junction Transistors on Forced Current Gain
p.629

HomeMaterials Science ForumMaterials Science Forum Vol. 924Design and Manufacturing of 1200V SiC JBS Diodes...

Design and Manufacturing of 1200V SiC JBS Diodes with Low On-State Voltage Drop and Reverse Blocking Leakage Current

Abstract:

This paper presents the design and fabrication of 1200V-rated SiC JBS diodes in a manufacturing environment. Various designs of p⁺-grids and edge termination structures were proposed and fabricated on 6-inch SiC substrates. Experimental results show that deeper p⁺ n junctions are necessary to reduce the leakage current in blocking mode of operation. It was also demonstrated that the hybrid-JTE edge termination structure is very efficient to provide a near-ideal breakdown voltage. Ti and Ni Schottky metals were compared with respect to forward voltage drops and reverse blocking behaviors at high temperatures up to 200 °C.

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Periodical:

Materials Science Forum (Volume 924)

Pages:

613-616

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.924.613

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Online since:

June 2018

Authors:

Woong Je Sung*, Ki Jeong Han, B. Jayant Baliga

Keywords:

4H-SiC, Floating Field Rings, Forward Voltage Drop, Junction Barrier Schottky (JBS) Diode, Junction Termination Extension, Reverse Blocking Leakage Current, Silicon Carbide (SiC)

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References

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