Effect of Design Variations and N2O Annealing on 1.7kV 4H-SiC Diodes

Yogesh K. Sharma; Hua Ping Jiang; C. Zheng; X. Dai; Ian Deviny

doi:10.4028/www.scientific.net/MSF.924.428

Paper Titles

Low Resistance Ti₅Si₃/TiC Ohmic contact on Ion-Implanted n-Type 4H-SiC C Face
p.409

Formation of Ohmic Contacts to n-Type 4H-SiC at Low Annealing Temperatures
p.413

Investigation on the Effect of Ge Co-Doped Epitaxy on 4H-SiC Based MPS Diodes and Trench MOSFETs
p.419

4H-SiC pMOSFETs with Al-Doped S/D and NbNi Silicide Ohmic Contacts
p.423

Effect of Design Variations and N₂O Annealing on 1.7kV 4H-SiC Diodes
p.428

Carrier Lifetimes in 4H-SiC Epitaxial Layers on the C-Face Enhanced by Carbon Implantation
p.432

Local Lifetime Control in 4H-SiC by Proton Irradiation
p.436

Lifetime Enhancement of 4H-SiC PiN Diodes Using High Temperature Oxidation Treatment
p.440

Isotropic Oxidation by Plasma Oxidation and Investigation of RIE Induced Effects for Development of 4H-SiC Trench MOSFETs
p.444

HomeMaterials Science ForumMaterials Science Forum Vol. 924Effect of Design Variations and N2O Annealing on...

Effect of Design Variations and N₂O Annealing on 1.7kV 4H-SiC Diodes

Abstract:

In this work we have studied the influence of design and process variations on electrical performance of 1.7 kV 4H-SiC Schottky diodes. Diodes with two variations in their active region design namely, stripe design and segment design, were fabricated in this study. Field Limiting Rings (FLRs) or Junction Termination Extension (JTE) were used as edge termination design to achieve a blocking voltage of 1.7 kV. In addition to these designs an extra processing step of nitrous oxide (N₂O) annealing was performed on some of the diodes. The study has shown that there is no extra beneficial effect of nitrous oxide annealing on device characteristics.

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Periodical:

Materials Science Forum (Volume 924)

Pages:

428-431

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.924.428

Citation:

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Online since:

June 2018

Authors:

Yogesh K. Sharma*, Hua Ping Jiang, C. Zheng, X. Dai, Ian Deviny

Keywords:

Hybrid SiC, IGBT, Junction Barrier Schottky (JBS) Diode, N₂O Annealing, Silicon Carbide (SiC)

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