Design and Economic Considerations to Achieve the Price Parity of SiC MOSFETs with Silicon IGBTs

Woong Je Sung; B. Jayant Baliga

doi:10.4028/www.scientific.net/MSF.858.889

Paper Titles

Avalanche Capabilities of Commercial 1200 V 4H-SiC Power MOSFETs
p.872

High Performance 1.2kV-2.5kV 4H-SiC MOSFETs with Excellent Process Capability and Robustness
p.876

Using SiC MOSFET’s Full Potential – Switching Faster than 200 kV/μs
p.880

Electrical Characterization of 1.2 kV-Class SiC MOSFET at High Temperature up to 380°C
p.885

Design and Economic Considerations to Achieve the Price Parity of SiC MOSFETs with Silicon IGBTs
p.889

Readiness of SiC MOSFETs for Aerospace and Industrial Applications
p.894

Experimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 °C to 500 °C
p.903

Processing and Prolonged 500 °C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect
p.908

Modelling of 4H-SiC VJFETs with Self-Aligned Contacts
p.913

HomeMaterials Science ForumMaterials Science Forum Vol. 858Design and Economic Considerations to Achieve the...

Design and Economic Considerations to Achieve the Price Parity of SiC MOSFETs with Silicon IGBTs

Abstract:

This paper aims to establish an intuitive model to determine the chip size of 1200V SiC MOSFET for a particular current rating. In order to provide the direction of next generation SiC MOSFETs, the most vital device parameters were investigated, and their quantitative influences are given. Cost analysis, based on the proposed method, shows that it is feasible to achieve the price parity to Silicon IGBTs by concurrent efforts such as improvements on the device innovation, advanced packaging technology, and reduced processing cost by leveraging high volume commercial 150 mm Si Foundries in US.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

889-893

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.889

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Online since:

May 2016

Authors:

Woong Je Sung*, B. Jayant Baliga

Keywords:

Chip Size, Edge Termination, MOSFET, On-Resistance, Silicon Carbide (SiC), Thermal Resistance

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* - Corresponding Author

References

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DOI: 10.1109/ispsd.2015.7123396

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