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HomeMaterials Science ForumMaterials Science Forum Vol. 806Polarization Engineering of Al(Ga)N/GaN HEMT...

Polarization Engineering of Al(Ga)N/GaN HEMT Structures for Microwave High Power Applications

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Abstract:

The aim of this paper is to optimize the epitaxial layer structure of an AlGaN/GaN high electron mobility transistor (HEMT) for high power density at high frequency. The idea is to play on the polarization engineering with the different layers of the epitaxial stack. The influence of the cap and barrier layer thicknesses, the aluminum content in the barrier and the insertion of an AlGaN buffer layer are studied through the electron gas density, electron mobility and sheet resistance. This permits to find out the best trade-off in order to satisfy the requirements for high performances.

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HeteroSiC & WASMPE 2013

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Periodical:

Materials Science Forum (Volume 806)

Pages:

81-87

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.806.81

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Online since:

October 2014

Authors:

Stephanie Rennesson*, Francois Lecourt, Nicolas Defrance, Magdalena Chmielowska, Sébastien Chenot, Marie Lesecq, Virginie Hoel, Etienne Okada, Yvon Cordier, Jean Claude de Jaeger

Keywords:

Gallium Nitride (GaN), High-Electron-Mobility Transistor (HEMT), Ka-Band, Polarization Engineering, Power Density

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* - Corresponding Author

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