Thinning of a Two-Inch Silicon Carbide Wafer by Plasma Chemical Vaporization Machining Using a Slit Electrode

Yuu Okada; Hiroaki Nishikawa; Yasuhisa Sano; Kazuya Yamamura; Kazuto Yamauchi

doi:10.4028/www.scientific.net/MSF.778-780.750

Paper Titles

Off-Orientation Influence on C-Face (0001) 4H-SiC Surface Morphology Produced by Etching Using Chlorine Trifluoride Gas
p.734

Development of Silicon Carbide Dry Etcher Using Chlorine Trifluoride Gas
p.738

Investigation of Trenched and High Temperature Annealed 4H-SiC
p.742

Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC Wafers by Using Chemical Etching with Molten KCl+KOH
p.746

Thinning of a Two-Inch Silicon Carbide Wafer by Plasma Chemical Vaporization Machining Using a Slit Electrode
p.750

A Novel Grinding Technique for 4H-SiC Single-Crystal Wafers Using Tribo-Catalytic Abrasives
p.754

Dicing of SiC Wafer by Atmospheric-Pressure Plasma Etching Process with Slit Mask for Plasma Confinement
p.759

Multi-Wire Electrical Discharge Slicing for Silicon Carbide Part 2: Improvement on Manufacturing Wafers by Forty-Wire EDS
p.763

Effects of Machining Fluid on Electric Discharge Machining of SiC Ingot
p.767

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Thinning of a Two-Inch Silicon Carbide Wafer by...

Thinning of a Two-Inch Silicon Carbide Wafer by Plasma Chemical Vaporization Machining Using a Slit Electrode

Abstract:

In recent years, silicon (Si) has been mainly used in power devices, but the limit of its performance is being reached. Therefore, silicon carbide (SiC) power devices have been attracting attention because they enable the fabrication of devices with low power consumption. To reduce the on-resistance in vertical power transistors, backside thinning is required after device processing. However, it is difficult to thin a SiC wafer with a high removal rate by conventional mechanical processing because its high hardness and brittleness cause cracking and chipping during thinning. Therefore, we have attempted to thin a SiC wafer using plasma chemical vaporization machining (PCVM), which is plasma etching using atmospheric-pressure plasma. In this study, we describe a machining property using a newly developed slit electrode that is composed of two parts and has a slit that allows for a new gas to pass.