Microstructural Analysis of Damaged Layer Introduced during Chemo-Mechanical Polishing

Hideki Sako; Tamotsu Yamashita; Kentaro Tamura; Masayuki Sasaki; Masatake Nagaya; Takanori Kido; Kenji Kawata; Tomohisa Kato; Kazutoshi Kojima; Susumu Tsukimoto; Hirofumi Matsuhata; Makoto Kitabatake

doi:10.4028/www.scientific.net/MSF.778-780.370

Paper Titles

Structure and Origin of Carrot Defects on 4H-SiC Homoepitaxial Layers
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Dislocation Analysis of 4H-SiC Using KOH Low Temperature Etching
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Characterization of Damage Induced by Electric Discharge Machining and Wiresawing with Loose Abrasive at Subsurface of SiC Crystal
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Characterization of Threading Edge Dislocation in 4H-SiC by X-Ray Topography and Transmission Electron Microscopy
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Microstructural Analysis of Damaged Layer Introduced during Chemo-Mechanical Polishing
p.370

Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography
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Micro-Raman Characterization of 4H-SiC Stacking Faults
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Defects Grouping and Characterizations of PL-Imaging Methods for 4H-SiC Epitaxial Layers
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Characterization of Vacant Broken Line Defects in A-Face Grown Crystals of Silicon Carbide
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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Microstructural Analysis of Damaged Layer...

Microstructural Analysis of Damaged Layer Introduced during Chemo-Mechanical Polishing

Abstract:

Damaged layers, which are introduced during chemo-mechanical polishing (CMP) underneath the 4°off-cut 4H-SiC wafer surface and cause surface defects formations after epitaxial films growth, are investigated by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). SEM observations show presence of small scratches on wafer surfaces after CMP process. The widths of such scratches are submicron meters, thus it is hard to detect them by optical microscopy. TEM observations show that high-density regions of dislocation loops exist below scratches and the widths of such dislocation loops are much wider than the morphological width. Details of the dislocation structure are also analyzed. It is shown that the high-density dislocation loops cause local surface roughening on the surface of the epitaxial film.

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Silicon Carbide and Related Materials 2013

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

370-373

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.370

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Online since:

February 2014

Authors:

Hideki Sako, Tamotsu Yamashita, Kentaro Tamura, Masayuki Sasaki, Masatake Nagaya, Takanori Kido, Kenji Kawata, Tomohisa Kato, Kazutoshi Kojima, Susumu Tsukimoto, Hirofumi Matsuhata, Makoto Kitabatake

Keywords:

Basal Plane Dislocation (BPD), Chemo-Mechanical Polishing (CMP), Transmission Electron Microscopy (TEM)

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References

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