Carrier Mobility as a Function of Temperature in as-Grown and H-Intercalated Epitaxial Graphenes on 4H-SiC

Michael Winters; E.B. Thorsteinsson; E.Ö. Sveinbjörnsson; H.P. Gislason; Jawad Hassan; Erik Janzén; Niklas Rorsman

doi:10.4028/www.scientific.net/MSF.778-780.1146

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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Carrier Mobility as a Function of Temperature in...

Carrier Mobility as a Function of Temperature in as-Grown and H-Intercalated Epitaxial Graphenes on 4H-SiC

Abstract:

The carrier velocity is measured as a function of electric field in as-grown and H-intercalaed epitaxial graphene grown on semi-insulating 4H-SiC in order to estimate the low field carrier mobility as a function of temperature. The mobility is also measured on the same samples as a function of temperature in a liquid Helium (He) cooled cryostat. The two temperature dependent measurements are compared in order to deduce the dominant carrier scattering mechanisms in both materials. In as-grown material, acoustic phonon scattering and impurity scattering both contribute, while impurity scattering dominates in H-intercalated material.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

1146-1149

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.1146

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Online since:

February 2014

Authors:

Michael Winters*, E.B. Thorsteinsson, E.Ö. Sveinbjörnsson, H.P. Gislason, Jawad Hassan, Erik Janzén, Niklas Rorsman

Keywords:

Carrier Density, Electron Transport, Epitaxial Growth, Graphene, Mobility, Scattering Processes, Silicon Carbide (SiC)

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