A 69-mΩ 600-V-Class Hybrid JFET

Satoru Akiyama; Haruka Shimizu; Natsuki Yokoyama; Tomohiro Tamaki; Sadayuki Koido; Yoshikazu Tomizawa; Toyohiko Takahashi; Takamitsu Kanazawa

doi:10.4028/www.scientific.net/MSF.740-742.925

Paper Titles

Development of High-Voltage 4H-SiC PiN Diodes on 4° and 8° Off-Axis Substrates
p.907

Electrical Characterization of PiN Diodes with p⁺ Layer Selectively Grown by VLS Transport
p.911

900V, 1.46mOhm-cm² 4H-SiC Depletion Mode Vertical JFET
p.915

Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to over 2 Million 600-V Hard Switch Stressing Events
p.921

A 69-mΩ 600-V-Class Hybrid JFET
p.925

Thermal Runaway Robustness of SiC VJFETs
p.929

Reliability Evaluation of 4H-SiC JFETs Using I-V Characteristics and Low Frequency Noise
p.934

Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET
p.938

Steady-State Analysis of a Normally-Off 4H-SiC Trench Bipolar-Mode FET
p.942

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742A 69-mΩ 600-V-Class Hybrid JFET

A 69-mΩ 600-V-Class Hybrid JFET

Abstract:

A hybrid silicon-carbide junction-gate field-effect transistor (HJT: hybrid JFET) is proposed. The HJT consists of a silicon-carbide (SiC) normally-on vertical JFET and a low-voltage normally-off silicon metal-oxide-semiconductor field-effect transistor (Si-MOS: silicon MOSFET). These two devices are connected by bonding wire as a cascode circuit [1] and packaged in a TO-3P split-lead-frame package with the same pin arrangement as conventional silicon power devices, which can thus be easily replaced by the proposed HJT. The vertical JFET has a steep-junction deep-trench structure in its channel region. This structure gives a low on-state resistance of under 60 mΩ and breakdown voltage of over 600 V with the die size of 6.25 mm². Since the deep-trench structure also lowers the cutoff voltage of the JFET, required minimum breakdown voltage of the Si-MOS is reduced and on-state resistance of the Si-MOS is lowered. The HJT demonstrated on-state resistance of 69 mΩ and breakdown voltage of 783 V. These results indicate that the proposed HJT is a strong candidate for low-resistance high-power switching devices.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2012

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

925-928

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.925

Citation:

Cite this paper

Online since:

January 2013

Authors:

Satoru Akiyama, Haruka Shimizu, Natsuki Yokoyama, Tomohiro Tamaki, Sadayuki Koido, Yoshikazu Tomizawa, Toyohiko Takahashi, Takamitsu Kanazawa

Keywords:

Cascode Circuit, Junction Field-Effect Transistor, Low-Voltage Metal-Oxide Field-Effect Transistor

Export:

RIS, BibTeX

Price:

Permissions:

Request Permissions

References

[1] Bantval J. Baliga and Michael S. Adler, U.S. Patent 4,663,547. (1987)

Google Scholar

[2] M. Gurfinkelet al., IEEE Trans. on El. Dev., vol. 55, no. 8, August 2008, pp.2004-2012.

Google Scholar

[3] DS_SGDR600P1, information on http://semisouth.com/wp-content/uploads/2011/05/DS_SGDR600P1_rev1.62.pdf.

Google Scholar

[4] Daniel Domes and Xi Zhang, CASCODE LIGHT, PCIM Europe 2010, 4 – 6 May (2010)

Google Scholar

[5] T. Nakamura et al., 2010 International Power Electronics Conference, pp.1023-1026.

Google Scholar

[6] T. Nakamura et al., 2011 International Electron Devices Meeting, p.26.5.1-26.5.3.

Google Scholar

[7] Lin Cheng et al., 2011 International Conference on Silicon Carbide & Related Materials, p.54.

Google Scholar

[8] Y. Tanaka et al., 22nd International Symposium on Power Semiconductor Devices & ICs, pp.357-360.

Google Scholar

[9] SJEP120R063, informaion on http://semisouth.com/wp-content/uploads/2011/05/DS_SJEP120R063.pdf.

Google Scholar

[10] CMF20120D, information on http://www.cree.com/products/pdf/CMF20120D.pdf.

Google Scholar

[11] SJEP120R100, information on http://semisouth.com/wp-content/uploads/2011/05/DS_SJEP120R100.pdf.

Google Scholar

[12] CMF10120D, information on http://www.cree.com/products/pdf/CMF10120D.pdf.

Google Scholar

[13] B. A. Hull et al., 2010 European Conference on Silicon Carbide & Related Materials, TP-123.

Google Scholar

[14] SJEP170R550, information on http://semisouth.com/wp-content/uploads/2011/05/DS_SJEP170R550_rev1.4.pdf.

Google Scholar

[15] Z. Stum et al., 2010 European Conference on Silicon Carbide & Related Materials, TP-125.

Google Scholar