Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface State
p.477
p.477
Thinning of 2-Inch SiC Wafer by Plasma Chemical Vaporization Machining Using Cylindrical Rotary Electrode
p.481
p.481
Control of Inclined Sidewall Angles of 4H-SiC Mesa and Trench Structures
p.485
p.485
TEM Observation of 8 Deg Off-Axis 4H-SiC (0001) Surfaces Planarized by Catalyst-Referred Etching
p.489
p.489
Abrasive-Free Planarization of 3-Inch 4H-SiC Substrate Using Catalyst-Referred Etching
p.493
p.493
Reduction of Charge Trapping Sites in Al2O3/SiO2 Stacked Gate Dielectrics by Incorporating Nitrogen for Highly Reliable 4H-SiC MIS Devices
p.496
p.496
Oxidation Process by RTP for 4H-SiC MOSFET Gate Fabrication
p.500
p.500
Carbon-Cap for Ohmic Contacts on n-Type Ion Implanted 4H-SiC
p.504
p.504
β-SiC NWs Grown on Patterned and MEMS Silicon Substrates
p.508
p.508
Abrasive-Free Planarization of 3-Inch 4H-SiC Substrate Using Catalyst-Referred Etching
Abstract:
Catalyst-referred etching (CARE) is an abrasive-free planarization method. We used 3-inch and 2-inch 4H-SiC (0001) 4° off-axis substrates to investigate the processing characteristics that are affected by the substrate diameter. The surface roughness of the 3-inch substrate was extremely smooth over the whole substrate. The surface roughness and removal rate of the 3-inch substrate were approximately the same as those of the 2-inch substrate.
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Info:
Periodical:
Materials Science Forum (Volumes 679-680)
Pages:
493-495
Citation:
Online since:
March 2011
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