Atomistic Simulation of SiC Growth at the SiC(0001)/Si1-XCx Interface by the Monte Carlo Method
p.87
p.87
Polarity Control of CVD Grown 3C-SiC on Si(111)
p.91
p.91
Epitaxial Growth on 4H-SiC on-Axis, 0.5°, 1.25°, 2°, 4°, 8° Off-Axis Substrates – Defects Analysis and Reduction
p.95
p.95
Investigation of the Growth of 3C-SiC on Si by Vapor-Liquid-Solid ( VLS ) Transport
p.99
p.99
Geometrical Control of 3C and 6H-SiC Nucleation on Low Off-Axis Substrates
p.103
p.103
Epitaxial Growth of 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Using Hexamethyledisilane[(CH3)6Si2]
p.107
p.107
Investigation of 3C-SiC Lateral Growth on 4H-SiC Mesas
p.111
p.111
High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC
p.115
p.115
Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas
p.119
p.119
Geometrical Control of 3C and 6H-SiC Nucleation on Low Off-Axis Substrates
Abstract:
Growth of 3C or 6H-SiC epilayers on low off-axis 6H-SiC substrates can be mastered by changing the size of the on axis plane formed by long terraces in the epilayer using geometrical control. The desired polytype can be selected in thick (~200 µm) layers of both 6H-SiC and 3C-SiC polytypes on substrates with off-orientation as low as 1.4 and 2 degrees. The resultant crystal quality of the 3C and the 6H-SiC epilayers, grown under the same process parameters, deteriorates when lowering the off-orientation of the substrate.
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Info:
Periodical:
Materials Science Forum (Volumes 679-680)
Pages:
103-106
Citation:
Online since:
March 2011
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