Optical Properties of Antireflective Subwavelength Structures on 4H-SiC for UV Photodetectors

Yasuo Hirabayashi; Satoru Kaneko; Kensuke Akiyama; Manabu Yasui; Keitaro Sakurazawa

doi:10.4028/www.scientific.net/MSF.645-648.1073

Paper Titles

Operation of Silicon Carbide BJTs Free from Bipolar Degradation
p.1057

Temperature Modeling and Characterization of the Current Gain in 4H-SiC Power BJTs
p.1061

Improvement of Current Gain with Etched Extrinsic Base Regions of Triple Ion Implanted SiC BJT
p.1065

Performance of Silicon Carbide Avalanche Photodiode Arrays and Photomultipliers
p.1069

Optical Properties of Antireflective Subwavelength Structures on 4H-SiC for UV Photodetectors
p.1073

Impact Ionization in 4H-SiC Nuclear Radiation Detectors
p.1077

Characterisation of Low Noise 4H-SiC Avalanche Photodiodes
p.1081

Fabrication and Characteristics of Micro Heaters Based on Polycrystalline 3C-SiC for High Temperature and Voltage
p.1085

Silicon Carbide APD with Improved Detection Sensitivity and Stability
p.1089

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Optical Properties of Antireflective Subwavelength Structures on 4H-SiC for UV Photodetectors

Abstract:

For the purpose of the improving the efficiency of the 4H-SiC photodiode, we reported the spectral reflectance of the antireflection structure of the 140nm period like Moth Eye structure on the 4H-SiC pn epi-wafer. Measured reflectivity of the antireflection structured surface is below 2% at 310nm. The peak responsivity of SWS photodiode is 170mA/W (QE=75%) at 280nm. The response cut-off wavelength is 380nm. Sensitivity of the sensor with SWS structure has increased by compared with that without SWS structure over 260nm of wavelength. At 310 nm, the sensitivity of the photodiode with SWS has increased by 1.3 times than that without SWS. Total amount of short circuit currents was 22% of increase.