Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy

Philip G. Neudeck; J. Anthony Powell; David J. Spry; Andrew J. Trunek; X. Huang; William M. Vetter; Michael Dudley; Marek Skowronski; Jin Qiang Liu

doi:10.4028/www.scientific.net/MSF.433-436.213

Paper Titles

Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes
p.197

Epitaxial Growth of 6H-SiC by a Vapor Liquid Solid Method
p.201

Growth of p-Type SiC Layer by Sublimation Epitaxy
p.205

Control of Pendeo Epitaxial Growth of 3C-SiC on Silicon Substrate
p.209

Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy
p.213

Growth of SiC Hetero-Epitaxial Films by Pulsed-Laser Deposition -Laser Frequency Dependence-
p.217

Thin Film SiC Epitaxy on Si(111) from Acetylene Precursor
p.221

Preparation of SiC/Si(111) Hetero-Epitaxial Junctions by PLD and Crystallographic and l-V Characterization
p.225

Hetero-Epitaxial Growth of 3C-SiC on Carbonized Silicon Substrates
p.229

HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Characterization of 3C-SiC Films Grown on 4H- and...

Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

213-216

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.213

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Cite this paper

Online since:

September 2003

Authors:

Philip G. Neudeck, J. Anthony Powell, David J. Spry, Andrew J. Trunek, X. Huang, William M. Vetter, Michael Dudley, Marek Skowronski, Jin Qiang Liu

Keywords:

3C-SiC, Cubic-SiC, Epitaxial Growth, Heteroepitaxy, Step-Free Surface Hetero-epitaxy

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