Spatial Uniformity of the Mechanical Properties of 3C-SiC Films Grown on 4-Inch Si Wafers as a Function of Film Growth Conditions
p.635
p.635
The Measurement of the Thickness of Thin SiC Layers on Silicon
p.641
p.641
Thickness Contour Mapping of SiC Epi-Films on SiC Substrates
p.645
p.645
Infrared Reflectance of Extremely Thin AlN Epi-Films Deposited on SiC Substrates
p.649
p.649
Cathodoluminescence of Defect Regions in SiC Epi-Films
p.653
p.653
Contactless Measurement of the Thermal Conductivity of Thin SiC Layers
p.657
p.657
Cross-Sectional Micro-Raman Spectroscopy: A Tool for Structural Investigations of Thin Polytypic SiC Layers
p.661
p.661
A Non-Destructive Technique for High Field Characterization of Gate Insulators in SiC MOS Capacitors
p.665
p.665
Raman Determination of Stresses and Strains in 3C-SiC Films Grown on 6-Inch Si Substrates
p.669
p.669
Cathodoluminescence of Defect Regions in SiC Epi-Films
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
653-656
Citation:
Online since:
February 1998
Keywords:
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