Paper Titles

Heat-Treatment Induced Modifications of Porous Silicon
p.1725

Luminescence Due to Electron-Hole Condensation in Silicon-On-Insulator and its Application to Defect and Interface Characterization
p.1731

Deep Electronic States at the Inverted AlAs/GaAs Interface Under Different Growth Modes
p.1737

TEM-Study of Frank Partial Dislocations in ZnSe/GaAs(001) Caused by Substrate-Preparation
p.1743

Defect Formation and Electronic Transport at AlGaN/GaN Interfaces
p.1749

Characterization of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al₂O₃(0001) Studied by TEM
p.1755

Formation Kinetics of the Al-Related Shallow Thermal Donors: A Probe for Oxygen Diffusion in Silicon
p.1761

Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium
p.1767

The Influence of Isovalent Doping on Diffusion of Interstitial Oxygen in Silicon
p.1773

HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Defect Formation and Electronic Transport at...

Defect Formation and Electronic Transport at AlGaN/GaN Interfaces

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 19

Info:

Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1749-1754

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1749

Citation:

Cite this paper

Online since:

December 1997

Authors:

L. Hsu, W. Walukiewicz, Eugene E. Haller

Keywords:

Gallium Nitride (GaN), Heterostructures, Modulation Doping, Two-Dimensional Electron Gas

Export:

RIS, BibTeX

Price:

Permissions:

Request Permissions