Paper Titles

Acceptor States in Boron Doped SiGe Quantum Wells
p.1613

Coulomb Interaction between Carriers Localized in InAs/GaAs Quantum Dots and on Point Defects
p.1619

Influence of Erbium Doping on Structure and Optical Properties of the InGaAs/GaAs Superlattices
p.1625

Defect Formation During Laser Induced Intermixing of GaAs/AlGaAs Multiple-Quantum-Well Structures
p.1631

Localized Epitaxy for Vertical Cavity Surface Emitting Laser Applications
p.1637

The Long Wavelength Luminescence Observation from the Self-Organized InGaAs Quantum Dots Grown on (100) GaAs Substrate by Metalorganic Chemical Vapor Deposition.
p.1643

Deep Hole Traps in Be-Doped Al_0.5Ga_0.5 As MBE Layers
p.1653

Nanotubes and Pinholes in GaN and their Formation Mechanism
p.1659

Defect-Related Recombination Processes in Low-Dimensional Structures of ZnCdSe/ZnSe, CdTe/CdMnTe and GaAs/AlGaAs
p.1665

HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Localized Epitaxy for Vertical Cavity Surface...

Localized Epitaxy for Vertical Cavity Surface Emitting Laser Applications

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 19

Info:

Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1637-1642

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1637

Citation:

Cite this paper

Online since:

December 1997

Authors:

M. Erdtmann, S. Kim, M. Razeghi

Keywords:

Al-Free, Distributed Bragg Reflector, Localized Epitaxy, Misfit Dislocation, VCSEL

Export:

RIS, BibTeX

Price:

Permissions:

Request Permissions