Carrier Concentration of CeFe2Al10 as a Candidate of Thermoelectric Material

Yukihiro Kawamura; Chihiro Sekine; Takashi Nishioka

doi:10.4028/www.scientific.net/MSF.1016.672

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HomeMaterials Science ForumMaterials Science Forum Vol. 1016Carrier Concentration of CeFe2Al10 as a Candidate...

Carrier Concentration of CeFe₂Al₁₀ as a Candidate of Thermoelectric Material

Abstract:

The study of Hall effect of Kondo semiconductor CeFe₂Al₁₀ is reported as a candidate of thermoelectric material used at low temperatures. Single crystals of CeFe₂Al₁₀ with orthorhombic crystal structure were grown by Al self-flux method. An anisotropy of the Hall effect is clarified by measuring Hall resistance by changing the direction of electrical current, magnetic field, and voltage respect to all the three crystal axes of orthorhombic crystal structure. The Hall effect of CeFe₂Al₁₀ has a strong anisotropy against the direction of magnetic field but weak anisotropy against the directions of current and voltage. The value of carrier concentration indicates that CeFe₂Al₁₀ is matallic, which causes a low performance as a thermoelectric material. In order to improve the value of dimensionless figure of merit, the electrons should be doped to CeFe₂Al₁₀.

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Periodical:

Materials Science Forum (Volume 1016)

Pages:

672-677

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1016.672

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Online since:

January 2021

Authors:

Yukihiro Kawamura*, Chihiro Sekine, Takashi Nishioka

Keywords:

CeFe₂Al₁₀, Hall Effect, Kondo Semiconductor, Thermoelectric Material

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* - Corresponding Author

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