Molecular Dynamics Study on Dielectric Properties of Silicon Oxynitride: Composition and Microstructure Dependence

Munemasa Tomita; Kenji Tsuruta

doi:10.4028/www.scientific.net/KEM.485.287

Paper Titles

Investigation of Electrical Hydrogen Detection Properties of Pt/WO₃ Thin Films Prepared by Sol-Gel Method
p.271

Low Temperature Preparation and Optical Hydrogen Response of Pd/Titania Composite Film
p.275

Synthesis of AnataseTiO₂ Having High Specific Surface Area from a Gel Precursor
p.279

Solvothermal Synthesis of WO₃ Photocatalysts and their Enhanced Activity
p.283

Molecular Dynamics Study on Dielectric Properties of Silicon Oxynitride: Composition and Microstructure Dependence
p.287

The Effect of Citric Ion on the Spin-Sprayed ZnO Films: IR and XPS Study for the Organic Impurities
p.291

Evaluation of Compact X-Ray Source Using Multiple LiTaO₃ Single Crystals
p.295

Crystallization and Morphology of Glassy Sanbornite
p.301

Preparation of Barium Titanate/Strontium Titanate Multilayered Nanoparticles
p.305

HomeKey Engineering MaterialsKey Engineering Materials Vol. 485Molecular Dynamics Study on Dielectric Properties...

Molecular Dynamics Study on Dielectric Properties of Silicon Oxynitride: Composition and Microstructure Dependence

Abstract:

Extra-long molecular-dynamics simulations are performed to study the interplay between dielectric properties and microstructures of silicon oxynitride. We quantitatively obtained the ionic permittivity and its linear dependence on nitrogen concentration. Analyses on microstructure of the oxynitride show that, as the N concentration increases, N atoms enter Si-O networks creating smaller-sized rings. While overall tendency of dielectric constant is monotonic increase on the N concentration, microscopic characteristics, such as local displacement of atoms, are strongly depend on local bonding environments.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Key Engineering Materials (Volume 485)

Pages:

287-290

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.485.287

Citation:

Cite this paper

Online since:

July 2011

Authors:

Munemasa Tomita, Kenji Tsuruta

Keywords:

Dielectric Property, Molecular Dynamic (MD), Silicon Oxynitride

Export:

RIS, BibTeX

Price:

Permissions:

Request Permissions

References

[1] K.F. Albertin and I. Pereyra: Microelectronic Engineering Vol. 77 (2005), p.144.

Google Scholar

[2] D. Fischer, A. Curioni, S. Billeter, and W. Andreoni: Phys. Rev. Lett. Vol. 92 (2004), p.23.

Google Scholar

[3] P. Vashishta, Rajiv K. Kalia, Jose P. Rino, and Ingvar Ebbsjö: Phys. Rev. B. Vol. 41 (1990), p.12197.

Google Scholar

[4] P. Walsh, A. Omeltchenko, R. K. Kalia, A. Nakano, and P. Vashishta: Appl. Phys. Lett. Vol. 82 (2003), p.118.

Google Scholar

[5] P. Vashishta, R. K. Kalia, and I. Ebbsjö: Phys. Rev. Lett. Vol. 75 (1995), p.5.

Google Scholar

[6] A. N. Sorokin, A. A. Karpushin, V. A. Gristsenko, and H. Wong: J. Appl. Phys. Vol. 105 (2009), p.073706.

Google Scholar

[7] K. -M. Behrens, E. -D. Klinkenberg, J. Finster. K. -H. Meiwes-Broer: Surf. Sci. Vol. 402 (1998), p.729.

Google Scholar

[8] S. Ogata, H. Iyetomi, K. Tsuruta, F. Shimojo, R. K. Kalia, A. Nakano, and P. Vashishta: J. Appl. Phys. Vol. 86 (1999), p.6.

Google Scholar

[9] J. P. Rino, I. Ebbsjö, R. K. Kalia, A. Nakano, and P. Vashishta: Phys. Rev. B Vol. 47 (1993), p.6.

Google Scholar

[10] L. Giacomazzi and P. Umari: Phys. Rev. B. Vol. 80 (2009), p.144201.

Google Scholar