Influence of Schottky Interfaces on Dielectric Properties in Perovskite-Type Oxide Thin-Film Capacitors

Naohiro Horiuchi; Takuya Hoshina; Hiroaki Takeda; Takaaki Tsurumi

doi:10.4028/www.scientific.net/KEM.485.203

Paper Titles

Fabrication of BaTiO₃ Films on Si Substrate by Inkjet Printing
p.187

Dielectric Properties of Bismuth Layer-Structured Oxide Thin Films with Preferential Crystal Orientation at High-Temperature
p.191

Growth of (111)-Oriented Epitaxial Bi(Mg_0.5Ti_0.5)O₃ Films and their Characterization
p.195

Growth of Orientation-Controlled Epitaxial KNbO₃ Thin Film by Hydrothermal Method
p.199

Influence of Schottky Interfaces on Dielectric Properties in Perovskite-Type Oxide Thin-Film Capacitors
p.203

Low-Loss Transmission Characteristics of Transparent Conductive Thin Films in GHz Range
p.207

Fabrication and Evaluation of Al₂O₃ Films Using the Aerosol Deposition Method
p.211

Planarization of Zinc Oxide Surface and Evaluation of Processing Damage
p.215

Magnetic Properties of Epitaxial NiFe₂O₄ Thin Films Prepared Using Dynamic Aurora PLD in a Magnetic Field
p.221

HomeKey Engineering MaterialsKey Engineering Materials Vol. 485Influence of Schottky Interfaces on Dielectric...

Influence of Schottky Interfaces on Dielectric Properties in Perovskite-Type Oxide Thin-Film Capacitors

Abstract:

An estimation method of the influence of interfaces on properties in perovskite-type oxide thin-film capacitors is presented. We proposed a modified Schottky model that can be employed to explain the electric properties of metal/perovskite-type oxide junctions. The modified model considers the electric field dependence of permittivity and the flow of electrons from metal to defect states located in the band gap of the perovskite oxide. The simulation based on this model could successfully describe the results of capacitance-voltage measurements of junctions between metals (Pt, Au, and Ag) and Nb-doped SrTiO₃, which were not explained by the conventional Schottky model. Additionally, a simulation for a thin-film capacitor with hysteretic behavior could depict an asymmetric capacitance-voltage curve.

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Periodical:

Key Engineering Materials (Volume 485)

Pages:

203-206

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.485.203

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Online since:

July 2011

Authors:

Naohiro Horiuchi, Takuya Hoshina, Hiroaki Takeda, Takaaki Tsurumi

Keywords:

Metal-Dielectrics Interface, Perovskite, Schottky Barrier, Thin-Film Capacitor, Tunability

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