Electrical Characteristics of Fluorine Passivated MOCVD-TiO2 Film on (NH4)2Sx Treated GaAs

Ming Kwei Lee; Chih Feng Yen; Tsung Hsiang Shih; Chen Lia Ho; Hung Chang Lee; Hwai Fu Tu; Cho Han Fan

doi:10.4028/www.scientific.net/KEM.368-372.232

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 368-372Electrical Characteristics of Fluorine Passivated...

Electrical Characteristics of Fluorine Passivated MOCVD-TiO₂ Film on (NH₄)₂S_x Treated GaAs

Abstract:

The high Dit is the major problem of III-V compound semiconductor MOSFET, which causes the pinning of the surface Fermi level near the middle of the energy gap. The GaAs with (NH4)2Sx treatment (S-GaAs) can remove the native oxides on GaAs and prevent it from oxidizing. The electrical characteristics of fluorinated polycrystalline TiO2 films deposited on p-type(100) S-GaAs were investigated. The fluorine from liquid phase deposition solution can passivate the grain boundary of polycrystalline TiO2 prepared by MOCVD. The leakage current through the grain boundaries was suppressed. The leakage current of MOCVD-TiO2/S-GaAs can be improved from 6.8 x 10-6 and 0.2 A/cm2 to 3.41 x 10-7 and 1.13 x 10-6A/cm2 under positive and negative electric fields at 1.5 MV/cm, respectively. Dit and k can be improved from 1.44 x 1012 cm-2eV-1 to 4.6 x 1011 cm-2eV-1 and 52 to 65, respectively. The effective oxide charges can be improved from 2.5 x 1012 C/cm-2 to 9.3 x 1011 C/cm-2.

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Periodical:

Key Engineering Materials (Volumes 368-372)

Pages:

232-234

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.368-372.232

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Online since:

February 2008

Authors:

Ming Kwei Lee, Chih Feng Yen, Tsung Hsiang Shih, Chen Lia Ho, Hung Chang Lee, Hwai Fu Tu, Cho Han Fan

Keywords:

(NH4)₂S_x, Fluorine, GaAs, MOCVD-TiO₂

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