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Promising Materials of Nonvolatile Memory Based on HfOх and Achievement of Device Parameters in the TiN/Hf_0.5Zr_0.5O₂/ TiN/SiO₂/Si and TiN/Hf_XAl_1-XO_Y/Pt/SiO₂/Si Test Structures Obtained on the National Technological Basis
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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 386Promising Materials of Nonvolatile Memory Based on...

Promising Materials of Nonvolatile Memory Based on HfOх and Achievement of Device Parameters in the TiN/Hf_0.5Zr_0.5O₂/ TiN/SiO₂/Si and TiN/Hf_XAl_1-XO_Y/Pt/SiO₂/Si Test Structures Obtained on the National Technological Basis

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Abstract:

The properties and applications of materials with non-volatile memory based on HfO₂ were briefly considered. In addition, an overview of the obtained results was given. On the basis of these results, the possibility of use of the structures TiN/ Hf_0.5Zr_0.5O₂/ TiN/ SiO₂/ Si and TiN/ HfxAl_1-xO_y/ Pt/ SiO₂/ Si for the non-volatile memory of FeRAM and ReRAM types obtained by the atomic-layer deposition was shown. In addition, the scalability of these elements and opportunity to create promising submicron integrated circuits for ferroelectric and resistive memory were demonstrated.

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Physics and Technology of Nanostructured Materials IV

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Periodical:

Defect and Diffusion Forum (Volume 386)

Pages:

172-177

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.386.172

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Online since:

September 2018

Authors:

Oleg M. Orlov*

Keywords:

Atomic Layer Deposition, Elements of Non-Volatile Memory, FeRAM, Ferroelectric Hysteresis, ReRAM, Resistive Switching

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