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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 903Effect of Oxygen Flow Rate on the Characteristics...

Effect of Oxygen Flow Rate on the Characteristics of RF Sputtered ZnO Thin Films

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Abstract:

Zinc Oxide (ZnO) thin films were deposited on glass substrate by radio frequency (RF)reactive magnetron sputtering technique at variable Oxygen flow rates while Argon flow rates waskept constant. The effect of oxygen flow rate on structural, electrical, optical properties of nanostructured ZnO thin films were investigated by X-ray diffractometer, scanning eletron microscopy(SEM), Hall effect measurements and UV-Visible spectrophotometer. X-ray diffraction (XRD) datareveals films are polycrystalline hexagonal structure with (002) peak as a preferred orientation andcrystallite size was found to be in range12 nm-16 nm.The electrical resistivity of films decreasesfrom 10^-1 Ω-cm to 10^-2 Ω-cm. All deposited ZnO thin films shows high transmittance above 95% inthe visible range 360 nm-800 nm. The optical band gap and refractive indices have been calculatedusing UV-Vis transmission spectra. Oxygen gas flow rates found to have large impact onoptoelectronic properties of ZnO films.

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Periodical:

Applied Mechanics and Materials (Volume 903)

Pages:

91-97

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.903.91

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Online since:

April 2021

Authors:

Pathan Parhana*, M.V. Lakshmaiah

Keywords:

Optoelectronic Properties, Oxygen Flow Rate, RF Magnetron Sputtering, ZnO Thin Films

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